Infineon IAUC24N10S5L300: High-Performance 300 A AUHET MOSFET for Demanding Automotive and Industrial Applications

The relentless drive towards electrification in the automotive and industrial sectors demands power semiconductors that deliver unprecedented levels of efficiency, reliability, and power density. Addressing this need, Infineon Technologies introduces the IAUC24N10S5L300, a benchmark-setting MOSFET that pushes the boundaries of what is possible in high-current switching applications.

This component is engineered around Infineon’s advanced Automotive Ultra High Efficiency Technology (AUHET). This proprietary process technology is the cornerstone of its exceptional performance, optimizing the trade-off between on-state resistance and switching losses. The result is a device that offers minimal conduction losses and superior switching efficiency, which is critical for improving the overall system efficiency and reducing thermal management demands.

A standout feature of the IAUC24N10S5L300 is its impressive 300 A continuous current rating. This high-current capability makes it ideally suited for the most demanding applications. In the automotive realm, it is a perfect fit for high-power DC-DC converters in electric vehicles (EVs), solid-state traction relays, and advanced battery management systems (BMS). For industrial environments, it excels in high-amperage motor drives, robust power supplies, and energy storage inverters, where operational resilience is paramount.

Beyond raw power, the device is characterized by an extremely low typical on-state resistance (RDS(on)) of just 0.24 mΩ. This ultra-low RDS(on) is a key contributor to reducing power dissipation, leading to cooler operation and higher efficiency. Furthermore, its low gate charge (Qg) ensures fast and efficient switching, which is essential for high-frequency operation, allowing for the design of smaller and lighter magnetic components and filters.

Designed with the highest standards of quality and reliability, the IAUC24N10S5L300 is AEC-Q101 qualified, guaranteeing its robustness for use in the harsh under-the-hood automotive environment. It is engineered to withstand high operational junction temperatures and offers exceptional resistance to thermal cycling and mechanical stress.

ICGOODFIND: The Infineon IAUC24N10S5L300 stands as a top-tier solution for engineers designing next-generation high-power systems. Its combination of a 300 A current rating, ultra-low 0.24 mΩ RDS(on), and advanced AUHET technology provides a critical advantage in achieving superior power density and efficiency, making it an outstanding choice for challenging automotive and industrial applications.

Keywords: AUHET MOSFET, 300 A Current Rating, Low RDS(on), Automotive Grade (AEC-Q101), High Power Density.