IGW50N65H5: A 650V IGBT Power Transistor from Infineon for High-Efficiency Switching Applications

In the realm of power electronics, achieving high efficiency and robustness in switching applications is a paramount objective. Addressing this need, Infineon Technologies introduces the IGW50N65H5, a state-of-the-art 650V trench gate field-stop IGBT that sets a new benchmark for performance in circuits requiring high power density and reliability.

This transistor is engineered to excel in a variety of demanding applications, including solar inverters, uninterruptible power supplies (UPS), and industrial motor drives. Its core strength lies in its ability to operate with exceptionally low saturation voltages (Vce(sat)) combined with minimal switching losses. This optimal trade-off is a hallmark of Infineon's advanced trench gate field-stop technology, which ensures that the device conducts current with high efficiency while also switching off rapidly to reduce energy dissipation as heat.

A key feature of the IGW50N65H5 is its positive temperature coefficient, which simplifies the design process by allowing multiple devices to be operated in parallel for higher power output without the risk of thermal runaway. Furthermore, it offers excellent ruggedness and a high short-circuit capability (8µs), providing designers with a significant safety margin in fault conditions. The device is also co-packed with a robust anti-parallel diode, making it an ideal solution for inverter bridges and other topologies requiring free-wheeling functionality.

The combination of high voltage capability, low loss characteristics, and strong ruggedness makes the IGW50N65H5 a superior choice for designers aiming to push the limits of efficiency and power density in their systems.

ICGOOODFIND: The Infineon IGW50N65H5 stands out as a high-efficiency 650V IGBT that masterfully balances low conduction and switching losses. Its rugged design, positive temperature coefficient, and integrated diode make it an exceptionally reliable and versatile power switch for next-generation renewable energy and industrial applications.

Keywords: IGBT, High-Efficiency Switching, 650V, Low Saturation Voltage, Trench Gate Field-Stop