Infineon SMBT2907AE6327HTSA1 PNP Bipolar Junction Transistor Datasheet and Technical Overview

The Infineon SMBT2907AE6327HTSA1 is a general-purpose PNP bipolar junction transistor (BJT) housed in a space-saving SOT-23 surface-mount package, designed for a wide array of amplification and switching applications. This transistor is part of Infineon's high-performance portfolio, offering engineers a reliable solution characterized by its low saturation voltage and high current gain. It is particularly suited for use in power management circuits, load switching, and as a driver in various consumer and industrial electronic products.

A key feature of the SMBT2907AE6327HTSA1 is its high current capability, supporting a continuous collector current (I_C) of -600 mA and a collector-emitter voltage (V_CEO) of -60 V. The device exhibits a low collector-emitter saturation voltage, typically -0.25 V at I_C = -10 mA, which enhances energy efficiency by minimizing power loss during operation in switching mode. Furthermore, it offers high DC current gain (h_FE), ranging from 100 to 300 at I_C = -10 mA, ensuring effective signal amplification with minimal input current requirements.

The transistor is housed in a SOT-23 (Small Outline Transistor) package, which is ideal for high-density PCB designs where board space is at a premium. Its construction is designed for low thermal resistance, improving heat dissipation and overall reliability under continuous operating conditions. The device is also characterized by its low noise performance, making it suitable for analog signal processing stages in audio and communication equipment.

Typical applications include power management functions such as voltage regulation and power switching in portable devices, as well as interface and driver circuits for controlling LEDs, relays, and motors. It is also commonly employed in inverter and converter circuits, providing essential switching functionality in power supply designs.

ICGOOODFIND: The Infineon SMBT2907AE6327HTSA1 is a robust and versatile PNP BJT that combines high current handling, low saturation voltage, and high gain in a compact SMT package, making it an excellent choice for efficient switching and amplification in modern electronic designs.

Keywords: PNP Transistor, SOT-23 Package, High Current Gain, Low Saturation Voltage, Power Switching.