Infineon IPW50R190CE: High-Performance 50mΩ 650V CoolMOS™ Power Transistor

Release date:2025-11-05 Number of clicks:158

Infineon IPW50R190CE: High-Performance 50mΩ 650V CoolMOS™ Power Transistor

In the realm of power electronics, efficiency, reliability, and thermal performance are paramount. The Infineon IPW50R190CE stands as a testament to advanced semiconductor engineering, addressing these critical demands with its exceptional characteristics. As part of Infineon’s renowned CoolMOS™ family, this power transistor is engineered to deliver superior performance in high-voltage applications.

The IPW50R190CE is a 650V-rated MOSFET featuring an ultra-low on-state resistance (RDS(on)) of just 50mΩ. This remarkably low resistance minimizes conduction losses, which is crucial for improving overall system efficiency. Whether used in switched-mode power supplies (SMPS), industrial motor drives, or renewable energy inverters, this device ensures that energy wastage is kept to an absolute minimum, contributing to cooler operation and higher power density designs.

One of the key innovations in the CoolMOS™ technology is the superjunction structure, which allows the IPW50R190CE to achieve significantly lower switching losses compared to conventional MOSFETs. This makes it an ideal choice for high-frequency switching applications, where reducing losses directly translates to better performance and smaller form factors. The transistor’s optimized gate charge (Qg) further enhances its switching capabilities, enabling faster turn-on and turn-off times without compromising reliability.

Thermal management is another area where the IPW50R190CE excels. The low RDS(on) and efficient switching characteristics reduce heat generation, allowing systems to maintain excellent thermal stability even under heavy load conditions. This inherent capability minimizes the need for extensive cooling mechanisms, thereby lowering system cost and complexity.

Furthermore, the device is designed with robustness in mind. It offers high avalanche ruggedness and strong immunity against voltage spikes, ensuring long-term durability in demanding environments. This reliability is essential for applications such as electric vehicle charging stations, server power supplies, and solar inverters, where failure is not an option.

In summary, the Infineon IPW50R190CE represents a cutting-edge solution for modern power conversion systems. Its combination of low conduction loss, fast switching, and thermal efficiency makes it a preferred component for designers aiming to push the boundaries of performance and efficiency.

ICGOODFIND: The Infineon IPW50R190CE CoolMOS™ power transistor sets a high standard with its ultra-low 50mΩ RDS(on), 650V rating, and superior switching performance, making it indispensable for high-efficiency, high-power applications.

Keywords:

CoolMOS™,

650V,

50mΩ,

superjunction,

switching performance.

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